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Pulsed plasma-immersion ion implantation (PIII) or Pulsed PLAsma Doping (P 2 LAD) is known as a cost effective solution for ultra shallow junction formation due to its capability to implant doping species at ultra-low energies (0.05–5keV), the advantages of P 2 LAD, high concentration and sharp distribution of the implanted species, also make this technique a good candidate to fabricate...
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