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We are developing volcano-structured double-gate Spindt-type field emitter array (VDGS-FEA) that is applicable for image sensors. The FEA have good focusing characteristics without current degradation under the beam focusing condition. In this paper, we will present detailed fabrication and typical emission characteristics of VDGS-FEA.
In this paper, fabrication and characteristics of GaAs field emitters were studied. The front and back sides of the GaAs field emitter were characterized using scanning electron microscopy (SEM). The emission current characteristics of the emitter was measured using a diode configuration in a vacuum of 4 times 10-6 Pa. The apparatus for measuring photo-response experiments was also presented
Light emission based on the excitation of rare gases by a low energy dc electron beam is a promising approach for realizing deep- or vacuum-ultraviolet light sources or lasers that are compact and have high efficiency. Carbon nanotube (CNT) field emitters have been used as electron sources in replacement of thermal cathodes to construct a low energy-consumption, compact and low-cost system. However,...
This paper presents a double-gated Spindt-type field emitter with thick extraction gate electrode. Simulation of the dependence of the electric field at the top of the emitter tip on the thickness of the extraction gate electrode is done. This emitter is fabricated using a silicon-on-insulator wafer as a starting material. The current-voltage characteristics show that emission current is obtained...
In this paper, a CdTe X-ray sensing device which consists of a CdTe pin diode and a field emitter is fabricated. The CdTe pin diode was fabricated by an excimer laser doping method, which was applied to form an n-type CdTe layer. An indium thin layer was evaporated on the p-type CdTe as a dopant material, and then an n-type CdTe layer was formed by irradiating a KrF laser to the dopant layer in a...
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