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In this paper, fabrication and characteristics of GaAs field emitters were studied. The front and back sides of the GaAs field emitter were characterized using scanning electron microscopy (SEM). The emission current characteristics of the emitter was measured using a diode configuration in a vacuum of 4 times 10-6 Pa. The apparatus for measuring photo-response experiments was also presented
The authors demonstrate both the stable and high brightness field emission from graphite nanoneedle (GRANN) cathode fabricated by simple plasma etching of a graphite rod. Bright electron emission of the order of 1012 Asr-1m-2) is obtained from GRANN cathode. As well as the bright emission, a stable emission under high residual pressure (10-5 torr) is obtained by lightly heating the GRANN cathode (Thermal-FE...
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