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Self-heating affects the RF performance of power transistors and must therefore be characterized for accurate device modeling. This paper presents an active loadpull (ALP) testbed which performs continuous wave measurements with the LSNA for arbitrary loads and substrate temperatures while jointly measuring the device die temperatures with an infrared sensor. Measurements are performed for a 15 W...
A large-signal measurement-based methodology to design oscillators using the Kurokawa theory is presented in this paper. Measurements of the negative input resistance and device line of a 2.5 GHz HEMT oscillator versus frequency and power, and its optimization using real-time active load-pull (RTALP) for the 2nd and 3rd harmonics are performed with a large signal network analyzer (LSNA). As a result,...
IV knee walk-out in AlGaN/GaN high electron mobility transistors (HEMTs) on a Sapphire substrate is analyzed using dynamic radio frequency (RF) load-lines acquired with a large signal network analyzer (LSNA) for both continuous-wave (CW) and pulsed-IV/RF excitations. When thermal effects and traps are bypassed using pulsed-IV biasing and pulsed-RF excitations, the IV knee walk-out observed in CW load-lines...
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