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Circuit-based large-signal device models remain extensively used to design integrated and hybrid microwave circuits. It has been recently demonstrated that device models can also be profitably applied under the form of a nonlinear embedding device model to help with the synthesis of multi-transistor power amplifiers (PA) such as Doherty PAs. In this paper we shall discuss this new design process from...
<?Pub Dtl?>Power amplifier (PA) behavior is inextricably linked to the characteristics of the transistors underlying the PA design. All transistors exhibit some degree of memory effects, which must therefore be taken into account in the modeling and design of these PAs. In this paper, we will present new trends for the characterization, device modeling, and behavioral modeling of power transistors...
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