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One diode–one resistor (1D–1R) hybrid‐type devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D–1R array architecture improves the sensing efficiency of the array memory cell, ultimately creating the possibility for high‐density integrated organic memory devices without restrictions...
Takhee Lee and co‐workers demonstrate on p. 1228 that hybrid‐type one‐diode and one‐resistor (1D‐1R) memory devices consisting of inorganic Schottky diodes and organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D‐1R array architecture improves the reading efficiency of the array memory cell, ultimately creating the possibility for...
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