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Two SMSD gate first planar CMOS devices were demonstrated. Vtn/Vtp= +0.49V/-0.48V were achieved by adjusting TiN to p-like metal and As I/I on nMOS. This enables the equivalent +/-0.2V low Vt target of N22 fully depleted CMOS technologies. Vtn/Vtp= 0.52/-0.55 were obtained by transforming PVD-TiN/Ti into n-like metal TiN/TiSix for nMOS and by Al I/I on TiN/Ti for pMOS. Al diffusion was facilitated...
Easily integrable cost effective gate first Single Metal Single Dielectric (SMSD) solution based on As implantation into TiN/HfO2 with ~1 nm EOT is presented. A consistent n-type shift of 250 mV down to 35 nm Lg is obtained by As I/I compared to the reference stack. Symmetrical threshold voltages (~ plusmn0.5 V) are met for the bulk planar devices using this technique, which would corresponds to low-V...
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