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SILC analysis is a powerful tool for the assessment of breakdown characteristics of high-kappa devices. By applying the SILC analysis during high field stress, we determined that the degradation mechanism for LaOx capped devices was drastically different as compared to the conventional Hf-based gate stacks. The La atoms diffused into the interfacial layer disrupting the SiO2 structure which may affect...
To understand hot carrier effects on high-k dielectrics without cold carrier trapping, we have investigated hot carrier induced damage with channel and substrate hot carrier stresses. Comparing substrate hot carrier stress, channel hot carrier stress showed significant cold carrier injection during hot carrier injection. Using a relaxation bias, we are able to evaluate hot carrier induced permanent...
Positive constant voltage stress combined with charge pumping (CP) measurements was applied to study trap generation phenomena in SiO2 /HfO2/TiN stacks. Using the analysis for frequency-dependent CP data developed to address depth profiling of the electron traps, we have determined that the voltage stress-induced generation of the defects contributing to threshold voltage instability in high-k gate...
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