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High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of high-voltage semiconductors, such as 10 kV SiC MOSFETs, has the added challenge of maintaining low electric field concentration in order to prevent premature dielectric breakdown. This work proposes a wire-bond-less, sandwich structure with embedded...
Low-temperature silver sintering technology is emerging as a lead-free die-attach solution to significantly improve the heat dissipation and reliability packaging of power devices and modules die attached by solder alloys. With the recent introduction of nanosilver materials, which dramatically simplify the bonding process by lowering the required pressure down to a few megapascals, the silver sintering...
An optical measurement system was developed to study the residual curvature of sandwiched assembly bonded by three different kinds of die-attachment materials, i.e., nano-silver paste, Pb/Sn solder, and SAC 305, in this paper. Effect of bondline thickness on thermal residual stress in the assembly was investigated. The curvatures of the assemblies were found significantly decreased when increasing...
This paper reports a novel MEMS fabrication technology that can integrate toroidal inductors or transformers into silicon substrate. Such toroidal windings are realized by electroplating copper to form 200micrometer-deep through-silicon vias (TSVs) and 60micrometer-thick copper lines on both sides of the silicon substrate. Meanwhile, the magnetic core is formed by filling deep silicon trenches with...
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