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The saturation of a critical gate voltage at 2-2.4 V for SiON with thickness < 1.6 nm (EOT < 1.4 nm) extends the role of digital breakdown (BD) in prolonging progressive BD at nominal voltages. As a result, the post-BD gate leakage degradation rate, which is extrapolated from a high voltage using the conventional approach, is highly overestimated, warranting one to revise the post-BD reliability...
For the first time, a new off-state drain-bias TDDB lifetime model is proposed for DENMOS devices. With the new model, the off-state drain-bias TDDB lifetime can be well predicted from the conventional gate-bias stress without extra long term drain-bias stress. The TDDB lifetime can be decoupled to three components; the small effective stress area and large voltage drop shared by the drain-extension...
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