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In this paper, the switching performance of monolithically integrated Si-GaN cascoded rectifiers is presented. The reverse recovery charge of the cascoded rectifier is 86.2% less than that of a Si fast recovery diode (FRD), which reveals great potential of cascoded rectifiers for high-speed power switching applications. Moreover, the double pulse tests are carried out for the cascoded rectifiers formed...
In this letter, a novel approach for monolithic integration of Si-based and GaN-based devices on Si substrate for high-voltage power switching applications is reported. To enable the integration, AlGaN/GaN epitaxial growth is carried out in recessed windows on a Si (111) substrate by selective epitaxial growth. A cascoded diode formed by series connection of a Si diode and a normally- ON AlGaN/GaN...
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