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This paper is based on the observation of a various CMOS seven transistor SRAM cell for very high density and low power applications. This cell retains its data with leakage current and positive feedback without refresh cycle. These various 7T SRAM cell uses one word-line and one bit-line and NMOS transistor to control. Simulation and analytical results show purposed cell has correct operation during...
The impact of technology scaling on three run-time leakage reduction techniques (Input Vector Control, Body Bias Control and Power Supply Gating) is evaluated by determining limits and benefits, in terms of the potential leakage reduction, performance penalty, and area and power overhead in 180nm, 90nm, and 45nm technologies. Cadence simulation results and estimations with various functional units...
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