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An S-band left-handed tunable phase shifter based on Barium-Strontium-Titanate (BST) thin film is developed. The application of left-handed transmission line considerably reduces the size of the phase shifter. The phase shift reaches about 124 degree while the permittivity of the BST film ranges from 225 to 450. The Figure of Merits (FoM) of the phase shifter reaches up to 42.48 °/dB as the insertion...
The memristor is a fundamental circuit element (along with capacitor, resistor and inductor) whose conductance is dependent on the previous functioning history. The concept was postulated almost four decades ago and was actually fabricated only recently. We report the fabrication of memristive junctions using an insulating film of a monolayer of cadmium stearate deposited using the Langmuir-Blodgett...
In this study, the electrical characteristics of high-k Tb2O3 polyoxide capacitors combined with rapid thermal post annealing have been improved (i.e.lower leakage current, higher electrical breakdown filed and lower electron trapping rate). The post-RTA annealing treatment can passivate and reduce trap states to terminate dangling bonds and traps in the high-k Tb2O3 dielectric and the interface between...
Tantalum nitride (TaN) thin films with different thicknesses were deposited by reactive sputtering technology as a function of N2/Ar flow ratio. Film microstructure was investigated by X-ray diffraction (XRD), and surface roughening was analyzed by atomic force microscopy and dynamic scaling theory. With increasing N2/Ar flow ratio, the film structure changes from polycrystalline to amorphous. With...
Nano-layered films of Cu/Cu(Zr)/Zr(Ge) and Cu/Cu(Zr) were deposited on the Si/SiOC:H substrates by magnetron sputtering. Samples were subsequently annealed at temperatures ranging from 350~500??C in vacuum, and characterized by four-point probe technique, glancing incident angle X-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy. The results indicated that the...
A highly reliable interface of a self-aligned CuSiN thin layer between the Cu film and nano-porous SiC:H dielectric barrier (k = 3.8) has been developed in the present work. It is shown that when the self-aligned CuSiN barrier produced between a Cu film and a porous-SiC:H barrier, the interfacial thermal stability and the adhesion of the Cu/SiC:H film are considerable enhanced. Furthermore, this kind...
The combination of thin-film-fluorescence (TFF) quenching with fiber-optic sensing technology is superior to other available means for explosives identification in many respects. However, collecting sufficient TFF power is a challenge because a low level of excitation light must be used to avoid the degradation of film material. The task becomes even more difficult given the tiny size of fibers involved...
In this paper, a high performance tiny grain polycrystalline pentacene OTFT were produced by introducing a polymethylmethacrylate (PMMA) insulator as a gate dielectric modification layer. A typical bottom gate configuration with a silver top contact OTFT to study the electrical characteristics, charge transport properties, and the hysteresis or memory effects in the current-voltage characteristics...
We report an innovative method of fabricating atomic switching junctions using an LB film of cadmium stearate in the gap between an inert electrode and a chalcogenide solid electrolyte. The thickness of the monolayer is about 2.8 nm and it helps ensure a constant gap size maintaining identical characteristics in a large number of switching junctions. We used a new energetic plasma process to create...
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