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A new heating approach for radiation hardness tests of the electronic components at elevated temperature is presented. Infrared laser radiation is used to increase temperature of the chip. In order to determine some practical aspects of the electronic components heating, a number of experiments for the devices in packages of different types have been performed in vacuum and in air environment. Heat...
A description of the testing facility ISNP with spectrum resembling that of terrestrial neutron radiation developed at the PNPI (Gatchina) is given. A broad spectrum (1–1000 MeV) spallation neutron source of the facility with a neutron flux of $4 \cdot {10^5}\;\text{n}/(\text{cm}^2{\cdot}\text{s})$ is used for accelerated soft error testing. High-quality collimation of the neutron beam in conjunction...
Multifunctional equipment for total ionizing dose testing of different functional types of analog integrated circuits and discrete transistors is developed and described. Corresponding test results for several types of analog devices are presented and discussed.
The paper presents SEE test results of COTS components considering to be applying in satellite equipment and critical to SEL and/or catastrophic failure. They were provided to confirm electronic components required hardness level and to define of the survivability in latched condition if SEL were observed during the experiment. In several cases LET thresholds were determined as it was specified in...
The technique for experimental determination of ELRDS-free devices is described. The technique is based on the conversion model of low dose rate effect in bipolar transistors.
6T SRAM bitcells for high density 64MB SRAM has been designed. Test chip with memory arrays based on these bitcells was manufactured and characterized for radiation effects. The device is SEL immune, has an error rate less than 4∙E-18 errors/bit•day.
The degradation of CMOS operational amplifiers with bipolar and CMOS input stage under the irradiation at different dose rates and temperatures is investigated. It is shown that such circuits can be susceptible to both enhanced low dose rate sensitivity and time-dependent effects that should be taken into account during radiation testing.
In this work we overviewed Roscosmos test facilities which are available for single event effects testing and are in developing and producing nowadays. Typical test procedure and admissible methods are also presented.
A description of the testing facility ISNP with spectrum resembling that of terrestrial neutron radiation development at the PNPI is given. The results of the tests carried out by the Branch of JSC "URSC"-"ISDE" (Moscow) at ISNP are presented.
Experimental and simulation study results of radiation shielding properties of multilayer shielding cases with tantalum carbide extender pigment are presented
Experimental and simulation study results of radiation shielding properties of multilayer thermal control coating with the adding element with high atomic number are presented.
Since 2010 the Russian Federal Space Agency (Roscosmos) has been utilizing SEE testing facilities at the Flerov Laboratory of Nuclear Reactions (FLNR) of the Joint Institute for Nuclear Research (JINR) in Dubna. The FLNR has abundant experience in development, creation and using heavy ion cyclotrons, ECR ion sources and auxiliary systems. The FLNR Accelerating Complex consists of four isochronous...
Analysis of flight data from spectrometers in geostationary and polar orbits is presented. Flight data are compared with other in-flight measurements and with trapped and solar particles models including AX8, AX9, CRRESELE, JPL, Nymmik.
this paper presents SEE test results of 256k RAM with preliminary γ-ray irradiation and comparison with previous not irradiated samples tests. Difference between irradiated and not irradiated samples test results for SEL is shown.
Fading effect analysis using in-flight dose sensors data was presented. The dose sensor measurements correction method was proposed and implemented. Corrected data were compared with space models. Last dose rate abrupt increasing events were presented.
The degradation of LM124J operational amplifier under the gamma-irradiation is studied for different dose rates and temperatures during irradiation. The results show that degradation of studied devices due to total ionizing dose effects continues to increase significantly, if the dose rate decreases below 0.01 rad(Si)/s, that is not typical for the most of bipolar devices. It can complicate the use...
The paper presents test results of electronic components candidate for spacecraft obtained on low (3-6 MeV/nucleon) and high (20-40 MeV/nucleon) energy heavy ion test facilities. In addition to obtaining experimental data, the purpose of the study was to demonstrate the availability of such high-energy facilities in Russia, by comparing the test results with earlier data, obtained on the same devices...
Roscosmos test facilities for total ionizing dose testing of electronic components intended for space application are addressed. Examples of the application of these test facilities for different test methods are examined.
The paper presents SEE test results of electronic components foreseen to be used in the satellite equipment. They were provided to determine electronic components hardness level and also SETs studying and techniques to record them.
Total ionizing dose (TID) sensors data analysis is presented. TID sensor features are described. Dose rate abrupt increases analysis is carried out considering other flight data. The flight data is compared with space models.
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