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This paper presents the impact of implementing Dual Material Gate (DMG) onto a fully depleted Silicon On Insulator (SOI) device on linearity performance as compare to the standard Single Material Gate (SMG) SOI device. Linearity study performed takes into account the influences of DMG properties namely gate length ratio (L1:L2) and gate workfunction difference (DeltaPhiM), silicon thickness (TSi)...
In this paper, a comprehensive comparison of analog/RF performance of ultra-thin-body (UTB) SOI and double-gate (DG) devices was investigated through simulation. Analog/RF figures of merit, which was being estimated including intrinsic gain, gm/gds, gm/Ids values, transition/cut-off frequency, fT, maximum oscillation frequency, fMAX, and minimum noise figure, NFmin. Due to the unique structure of...
This paper presents the results of extensive simulations on the characterization of asymmetrical channel device, namely Dual material Gate Fully Depleted Silicon On Insulator (DMG-FD-SOI) in the sub-100nm dimensions with emphasis on the analog, radio frequency (RF) performances and short channel effects (SCEs). The obtained results may serve as useful guidelines to get a basis overview of this gate-material...
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