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This research investigated the electrical characteristics of CeOx thin films deposited on n‐type 4H‐SiC via RF‐magnetron sputtering technique. Postdeposition annealing of CeOx was performed at different annealing temperatures (400, 600, 800, and 1000 °C) for 30 min in an argon ambient. The thickness of the deposited CeOx ranging from 30 to 40 nm was measured by an ellipsometer. All annealed samples...
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