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The radiation hardness of nominally identical SRAM test chips fabricated in five commercial foundries is examined. Large variations in single-event latchup and total dose response are observed. The softest SRAMs fail functionally at ~200 krad(SiO2) and have a fairly large single-event latchup cross section. This is in contrast to the hardest foundry split which is nearly immune to single-event latchup...
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