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This paper investigates the electromigration induced hillock generation in a wafer level interconnect structure through numerical approach. The electronic migration formulation that considers the effects of the electron wind force, stress gradients, temperature gradients, as well as the atomic density gradient has been developed. The parameter study for the Al line geometry with different width and...
This paper studies the numerical simulation method for electromigration void incubation and afterwards void propagation based on commercial software ANSYS Multi-physics and FORTRAN code. The electronic migration formulation considering the effects of the electron wind force, stress gradients, temperature gradients, as well as the atomic concentration gradient has been developed for the electromigration...
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