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Dependence of the fracture-resistance of a PowerTrench MOSFET device on its topography in Cu bonding process was investigated. Two different topographies, namely dimple and round, have been tested. A significantly higher cratering rate has been clearly observed on dimple topography. The dimple topography exhibited a cratering rate of 371 k ppm levels compared to 0 ppm in round topographies. Three-dimensional...
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