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One-dimensional (1D) silicon nanowires (SiNWs) were fabricated on catalyst free Si (100) substrate using a thermal evaporation method. Based on SVLS growth mechanism, the obtained SiNWs were 30 to 265nm in diameter and 1.7μm to several tens of microns in length. It was found that the presence of graphite powder only is enough to accomplish growth. A systematic study of how the growth conditions, such...
One-dimensional (1D) silicon nanowires (SiNWs) were fabricated on a catalyst free Si (100) substrate using a thermal evaporation method. Based on a SVLS growth mechanism, the SiNWs obtained were 30–265 nm in diameter and 1.7 μm to several tens of microns in length. It was found that the presence of graphite powder alone is enough to accomplish the growth. A systematic study of how the growth conditions,...
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