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A self‐biased inductorless wideband low‐noise amplifier (LNA) is proposed in this article. Both passive shunt feedback and interleaving active‐loop techniques are used to achieve enhanced bandwidth (BW), wideband input matching, and a low noise figure (NF). The LNA is implemented using a standard 0.18 μm CMOS process. The measured maximum power gain is 19.4 dB with a −3 dB BW between 0.1 and 6 GHz...
This paper focuses on a wideband low noise amplifier (LNA) for DVB-T fabricated with the TSMC 0.18 mum CMOS process. The proposed wideband LNA, from 460 MHz to 870 MHz, achieves a wideband and flat gain property by using the resistive feedback technique. Compared with other wideband LNAs, the proposed circuit can achieve a flatter gain curve, a flatter IIP3 in band, and a small chip area. The overall...
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