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This paper describes a high efficiency and high output power GaN power amplifier for C-band space applications. The amplifier uses on-chip harmonic tuned FETs to improve efficiency. A 2nd harmonic input tuning circuit is incorporated into each unit on-chip FET cell and realizes highly precise control of 2nd harmonic input impedance. A 100 W power amplifier with 4-chips achieves a 67.0% PAE at 3.7...
This paper describes a high efficiency (68%), high output power (100 W), high reliability GaN HEMT amplifier for C-band space applications. The high efficiency is achieved by 2nd-harmonic frequency (2fo) tuning circuits in the input and output matching circuits. The input circuit uses open-ended stubs located nearby FET gate terminals for setting the 2fo reflection-phase at the optimum phase. In the...
This paper describes a high efficiency (68%), high output power (100W), high reliability GaN HEMT amplifier for C-band space applications. The high efficiency is achieved by 2nd-harmonic frequency (2fo) tuning circuits in the input and output matching circuits. The input circuit uses open-ended stubs located nearby FET gate terminals for setting the 2fo reflection-phase at the optimum phase. In the...
We measured electron temperature and density by an electrostatic probe, and dissociation degree, number density of electronically excited states, and rot-vibrational temperatures of 2.45 GHz-microwave discharge hydrogen plasma at several torr in a cylindrical discharge quartz tube by spectroscopic observation. The electron temperature and density are found to be 3.0 - 4.5 eV and 7.0 times 1010 - 3...
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