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We have investigated terahertz (THz) generation from InGaN/GaN multiple quantum wells (QWs). For the laser pump power of 400 mW at 391 nm, the highest THz output power is nearly 1 μW. Assuming that the output power quadratically scales up with the interaction length, such an output power corresponds to a normalized output power of 1.7nW/nm2. The normalized output power measured on the InGaN/GaN multiple...
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.
We have observed blue and red Stark shifts of two excitonic transition peaks in multiple GaN/AlN asymmetric coupled quantum wells due to increases in electric fields originating from spatial separation of photogenerated electrons and holes.
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