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Infrared Photodetectors
In article number 2210907, Mohit Kumar, Hyungtak Seo, and co‐workers report on the development of Mott material (vanadium dioxide) and silicon‐based integrated infrared photodetectors with giant superlinear photoresponse (exponent >18) and an ultralow dark current of 4.46 pA., which are then used for intensity‐selective high‐performance near‐sensor processing and the reconstruction...
Light‐intensity selective superlinear photodetectors with ultralow dark current can provide an essential breakthrough for the development of high‐performing near‐sensor vision processing. However, the development of near‐sensor vision processing is not only conceptually important for device operation (given that sensors naturally exhibit linear/sublinear responses), but also essential to get rid of...
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