The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Field‐Effect Transistors
In article number 2207858, Huajie Chen, Zebing Zeng, Yuanyuan Hu, and co‐workers report a methodology of fabricating electrodes for semiconductor devices by van der Waals integration of doped organic semiconductor films (DOSCFs). The DOSCF electrodes are attractive due to their solution‐processability, mechanically flexibility, and interesting optoelectronic properties. The...
Electrodes are indispensable components in semiconductor devices, and now are mainly made from metals, which are convenient for use but not ideal for emerging technologies such as bioelectronics, flexible electronics, or transparent electronics. Here the methodology of fabricating novel electrodes for semiconductor devices using organic semiconductors (OSCs) is proposed and demonstrated. It is shown...
Bias‐stress stability is essential to the practical applications of organic field‐effect transistors (OFETs), yet it remains a challenge issue in conventional planar OFETs. Here, the feasibility of achieving high bias‐stress stability in vertical structured OFETs (VOFETs) in combination with doping techniques is demonstrated. VOFETs with silver nanowires as source electrodes are fabricated and the...
Doping is a powerful technique for tuning the electrical properties of organic semiconductors (OSCs). Although numerous studies are performed on OSC doping, thus far only a few n‐type dopants have been developed. Herein, two low‐cost nucleophilic organic bases are reported, namely 1,5,7‐Triazabicyclo [4.4.0] dec‐5‐ene (TBD) and 1,5‐Diazabicyclo [4.3.0] non‐5‐ene (DBN) for n‐doping of OSCs. The two...
In nanoscale silicon CMOS, the contact resistance could considerable lower the on-current and significantly increase the delay. Most models of metal-semiconductor and silicide-silicon contacts remain over-simplified and phenomenological. In this study, ab initio simulations based on the density-functional theory (DFT) and quantum transport simulations based on the non-equilibrium Green's function...
The CoSi2/Si and NiSi2/Si interfaces are examined by using the first principles calculation. metal-induced gap states (MIGS) exist at the interface, and the magnitude is large enough to pin the Fermi level. The MIGS decay exponentially with interface distance and penetrate about 6 ?? into the Si layers. Schottky barrier height (SBH) for electrons can be increased by a B atom at substitutional site...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.