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Performances of monolayer MoS2 transistors with phonon scattering are investigated. The on-current of a 20nm long device can be degraded by 40% with phonon scattering compared with the ballistic limit. The sub-threshold swing (SS) and drain induced barrier lowering (DIBL) are found to be insensitive to phonon scattering. SS < 100mV/decade can be achieved with a gate length LG > 5nm and DIBL...
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