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The near-surface stress distribution around Cu through-silicon vias (TSVs) was studied by micro-Raman spectroscopy along with finite-element analysis from room temperature to 100 $^{\circ}\hbox{C} $. Temperature-dependent measurements, along with simulations, revealed that the stresses near TSVs can have two components: 1) the preexisting stress before copper filling; and 2) the coefficients of thermal...
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