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In this paper a comparative design study has been shown with 6.5kV Si-IGBT/Si-P IN diode, 6.5kV Si-IGBT/SiC-JBS diode, and 10kV SiC-M OSFET/SiC-JBS diode in an act ive front-end (AFE) converter for medium-voltage shipboard application. Megawatt converters based on the aforementioned technologies are being designed and compared at tw o different switching frequencies. In this regard, accurate circuit...
Silicon carbide (SiC) is more favorable than Silicon (Si) to build high voltage devices due its wider band-gap and higher critical field strength. Especially, the SiC MOSFETs are finding their niche in 1 kV range, which is currently dominated by Si IGBTs. This paper aims at demonstrating high power and high frequency operation of the SiC MOSFETs, as a means to evaluate the feasibility of using SiC...
4H-SiC DMOSFETs designed to conduct up to 20 A and block in excess of 1200 V are described, and a performance comparison with comparably rated Si MOSFETs and IGBTs is presented. The 4H-SiC DMOSFETs show comparable to slightly improved on-state losses compared to the Si IGBTs and significantly improved performance over the Si MOSFET. Leakage currents of the 4H-SiC DMOSFETs are two orders of magnitude...
The characteristics of silicon carbide, 1200 V, 20 A MOSFETs have been described from a user's perspective. DC and dynamic characteristics of SiC MOSFETs have been compared with Si 900 V super junction MOSFET (SJMOSFET), Si 1200 V MOSFET and IGBTs. The advantages of SiC MOSFET are their lower turn-off losses, lower conduction losses and lower gate charge. However, they have low output impedance, low...
There has been a rapid improvement in SiC materials and power devices during the last few years. SiC unipolar devices such as Schottky diodes, JFETS and MOSFETs have been developed extensively and advantages of insertion such devices in the power systems have been demonstrated. However, for high power systems such as high voltage converters, bipolar devices are preferable due to their low on-resistance...
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