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Successful lateral electrical isolation of silicon 2-D electron gases (2DEGs) at liquid helium temperature (4.2 K) by ion implantation is demonstrated. The sheet resistance of the implanted regions can be achieved as high as at 4.2 K. Thermal stability up to 550 makes the technique compatible with most subsequent processing steps to fabricate...
Quantum dot devices in the Si/SiGe material system are a promising candidate to implement quantum computation due to the weak nature of its nuclear spin. A Schottky split-gate on a Si/SiGe modulation-doped two-dimensional electron gas (2DEG) with negative biases has become a common way to define lateral quantum dot arrays. However, the severe leakage through the Schottky gate caused by the phosphorus...
Si quantum dots formed in a Si/SiGe two-dimensional gas (2DEG) are a promising candidate for the realization of solidstate quantum computation. To achieve effective Schottky gating for charge manipulation in the normal structures, a sharp phosphorus turn-off is required. We investigated phosphorus surface segregation in relaxed Si0.7Ge0.3 epitaxially grown by rapid thermal chemical vapor deposition...
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