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Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory...
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