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We demonstrate a hole-blocking crystalline-silicon/titanium-oxide heterojunction that can be fabricated by a modified MOCVD process at only 100 ºC substrate temperature. Ultra thin layers of only 1–4 nm TiO2 can be reliably deposited on silicon with no pinholes. Band alignment at the Si/TiO2, experimentally determined using surface spectroscopy, confirms that Si/TiO2 interface has a large barrier...
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