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We implemented the Gossick cluster damage in a TCAD simulation suite to identify the mechanism of retention time drop in irradiated SDRAM cell. The location of the cluster appears to be a key parameter. Simulations results are coherent with previous studies and explained by semiconductor physics.
Retention time degradation and cell functionality under proton irradiation is studied for two SDRAM references that exhibit in-flight faulty behavior. Elements that may be used for physical interpretation of the phenomenon are given.
Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are important parameters for SEGR triggering or latent defect formation. This work addresses the limits of the post-irradiation gate stress relevance used for Power MOSFETs space qualification.
Charge to breakdown reduction after electric stress is observed after heavy ion irradiation at two energies exhibiting a similar LET value. An enhanced degradation of the oxide layer reliability is observed at low energy.
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