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(Zn)CdTe/MgCdTe double heterostructures (DH) are grown on InSb substrates using MBE. The DHs are capped with 10∼30 nm (Zn)CdTe layers to prevent MgCdTe from oxidization. The carrier lifetimes of the DHs with Mg0.24Cd0.76Te barrier layer degrade fast within the first week in atmosphere and then at a much slower rate. The carrier lifetime degradation is about 20–30% compared with the initial value....
A II–VI/Si tandem cell concept is proposed here to potentially reach greater than 30% energy conversion efficiency under one-sun condition. The required MgCdTe alloy with a bandgap of ∼ 1.7 eV has been successfully grown on InSb (100) substrates by molecular beam epitaxy with excellent structural and optical qualities, confirmed by high-resolution X-ray diffraction, and temperature-dependent steady-state...
CdTe/MgCdTe double heterostructures with n-type indium doping concentrations, varied from 1×1016 cm−3 to 1×1018 cm−3, have been grown on InSb substrates using MBE. Capacitance voltage measurements show that carriers are 100% ionized for the doping concentrations in this range. The carrier lifetime decreases with increasing doping concentration, from 0.73 µs for an unintentionally doped sample to sub-nanosecond...
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