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We report on the fabrication and characterization of the self-switching nano-diodes using zinc oxide films grown on glass substrates for use as transparent rectifiers. Diode-like characteristics were clearly observed. The current clearly increased with increases in the channel length and the turn-on voltage sifted toward zero volt with decreasing the channel width. Overall, we found that the rectifying...
A systematic study of the intense terahertz (THz) emission from InAs thin films grown on a GaAs substrate was performed by varying the V/III ratio of the InAs. The emission intensity increased as the film thickness increased up to 1 μm and became stronger than that from a p-type InAs substrate for sample of lower V/III ratio. The mechanism of the enhanced THz emission is discussed, and a possible...
The effects of the diffusion control technique by inserting physical vapor deposition (PVD)-TiN film between poly-Si and CVD-TiN films on the properties of p-MISFETs using poly-Si/TiN/HfSiON gate stacks have been studied. This insertion was effective in suppressing the diffusion of Si from poly-Si to HfSiON and was able to reduce the Vth value by 0.12 V while keeping the equivalent oxide thickness...
This paper describes key technology of a small sized stacked capacitor-cell for 16MDRAM. The main feature of the technology is unique and highly productive double self-aligned contact process for bit line and for storage node, whichl is immune against process fluctuations. The cell made by this process showed desirable characteristics for DRAM operation.
Recently photochemical vapor depositions have attracted attentions as the formation method of thin films at low temperature with small amount of impurity and irradiation damage. In studies of photochemical vapor deposition, the thin film formation of inorganic substances, such as silicon dioxide (SiO2), silicon nitride (Si3N4), amorphous silicon and various kinds of metals have been reported(1)∼(5)...
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