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In this paper, we report on vertically scaled GaN/AIN DH-HEMTs with regrown n+GaN ohmic contacts by MBE. Our conventional AlGaN barrier was replaced with an AlN barrier, greatly reducing the barrier thickness while maintaining a high carrier density. A selective-area MBE regrowth of an n+GaN ohmic contact layer significantly reduced access resistance. The 60 nm device exhibited a low Ron of 0.81Ω·mm...
In this paper, a report on high PAE, high breakdown-voltage HEMTs grown by ammonia MBE is discussed. First, an AlN nucleation layer was grown by plasma-assisted MBE on SiC. Then GaN buffer was grown by ammonia MBE, followed by 30 nm ammonia Al0.3Ga0.7N. A sheet charge of 1x1013 cm-2 with a mobility of 1500 cm2V-1s-1 was obtained from Hall measurements.
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