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Mg0.3Zn0.7O with the resistance of 106 Ω/cm, can acts as a semi-insulating material in MESFET structure, was deposited on quartz substrate before being immersed in ZnO solution for 4.5 hours. The ZnO solution of 0.05M was prepared one day earlier, was stirred and heat, before being left at room temperature to get better solubility. This chemical bath deposition technique was believed to be very easy,...
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