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By taking advantage of high-stress SiN/sub x/ film as a source of vacancies, a defect-free shallow junction technology was developed by point defect engineering. By depositing the SiN/sub x/ film with high stress (1*10/sup 10/ dyn/cm/sup 2/) and annealing the sample, the vacancies were supplied from the SiN/sub x/-Si interface into the Si substrate to relax the stress of the SiN/sub x/ film and react...
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