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We describe an AlN-based resonant switch (resoswitch) for use in a Near-Zero (NZero) RF Wake-up receiver. A folded beam structure compensates for the curvature caused by the stress gradient in sputtered AlN and ensures that the free end of center actuation beam is level with the side anchor beams. A 80.13 kHz resoswitch with Q over 4000 and an actuation gap of approximately 600 nm turns on when a...
This paper reports on the first demonstration of a passive light-actuated micromechanical relay (LMR). Differently from any existing switching element, the proposed LMR relies on a plasmonically-enhanced thermomechanical coupling to selectively harvest the impinging electromagnetic energy, in a specific spectral band of interest, and use it to mechanically create a conducting channel between the device...
This work presents the first experimental demonstration of an intrinsically switchable Aluminum Nitride (AlN) 2-port MEMS resonator using 3 monolithically integrated chalcogenide phase change material (PCM) switches.
This paper presents the first demonstration of a new approach to dynamic reconfiguration of the mode of vibration in AlN piezoelectric MEMS resonators using phase change material (PCM) based switchable electrodes. This innovative design solution enables effective ON/OFF switching of the acoustic resonance (∼4.75X impedance variation at resonance), and reconfiguration of the device electromechanical...
This paper reports on the first demonstration of a reconfigurable Complementary Metal Oxide Semiconductor (CMOS) oscillator based on MicroElectroMechanical System (MEMS) resonators operating at 4 different frequencies (268, 483, 690 and 785 MHz). A bank of multi-frequency switchable AlN Contour-Mode MEMS resonators (CMRs) were connected to a single CMOS oscillator circuit that can be configured to...
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