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A short-injector mid-infrared quantum cascade laser based on the In0.6Ga0.4As/In0.365Al0.635As material system is analyzed by means of a self-consistent ensemble Monte-Carlo method. Scattering mechanisms, namely electron - acoustic phonon, electron-longitudinal optical phonon including hot phonons, electron-electron, electron-alloy, electron-impurity and interface roughness scattering as well as the...
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 107 and forward current density as high as 104 A/cm2 are reported. Results of the integration with NiO based switching memory elements are also shown.
Nanofabrication is the core task performed and constantly further developed by todays and future semiconductor industry. Optimization of throughput and minimizing process cost and complexity thus increasing fabrication reliability constitute the main challenges within this development. Printing techniques play a crucial role in nanofabrication since they are offering the capability of large area patterning...
We have fabricated vertical nanogap electrode devices based on Silicon-on-Insulator (SOI) substrates for investigating the electronic transport properties of long, conjugated molecular wires. Our nanogap electrode devices comprise smooth metallic contact pairs situated at the sidewall of an SOI structure, obtained by selective recess-etching a few nanometers thin buried oxide layer and subsequent...
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