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We have investigated optical characteristics and carrier recombination dynamics of {11¯01} and {112¯2} semipolar InGaN/GaN quantum wells of light-emitting diodes (LEDs) structures grown by selective area epitaxy (SAE). The semipolar samples exhibit higher radiative recombination rates than the polar one at the same temperature. Self-consistent Poisson and 6 × 6 k·p Schrödinger calculation results...
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