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Thin Ge films with a thickness of about 10 nm were deposited on hydrogen-terminated and oxidized Si(100) surfaces using electron beams. We prepared the above two types of surfaces by chemical treatments and measured the amounts of oxygen and hydrogen by ion channeling and nuclear resonant reaction of 1 H( 15 N, αγ) 12 C, respectively. They were estimated to be 1.2 nm (SiO ...
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