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For the first time, we demonstrate heterodyne EO sampling of terahertz pulses in a DAST crystal. Compared with lithium niobate, which was used in our previous heterodyne EO sampling studies, organic DAST crystal has a 1.5 times larger EO coefficient. Our experimental results demonstrate that DAST is a very promising material for highly sensitive terahertz EO sampling.
We propose and demonstrate electro-optic (EO) sampling of terahertz (THz) radiation by using GaAs in the Cherenkov phase-matching scheme. This technique can be implemented without Si-prism coupling due to a small difference between optical group and THz phase refractive indices of GaAs and its low THz absorption.
High-frequency devices operating at 3 GHz or higher are required, for instance, for future 4th generation mobile phone systems in Japan. Using a substrate with a high acoustic velocity is one method to realize a high-frequency acoustic or elastic device. A Lamb wave has a high velocity when the substrate thickness is thin. To realize a high-frequency device operating at 3 GHz or higher using a Lamb...
A high frequency device of 3 GHz or more is required, for instance, for future 4-th generation mobile phone system in Japan. Using a substrate with a high velocity is one method to realize a high frequency elastic device. A lamb wave has a high velocity when the substrate thickness normalized by a wavelength (lambda) of an elastic wave is thin. It is difficult to make a very thin crystal plate in...
It has been considered that it is difficult to realize higher frequency devices than 3 GHz by using conventional surface acoustic wave (SAW) substrate. In order to realize a high frequency device, there are some methods such as using a high velocity substrate or shortening a wavelength (lambda) of an interdigital transducer (IDT). However, almost of all conventional SAW substrates have a low velocity...
A passively Q-switched monolithic solid-state laser with a crystal of Nd:YAG+Cr:YAG bonded at room temperature and a fiber-coupled LD stack was developed. 12 mJ output with 50 Hz and 2.3 ns pulse width was achieved.
The Lamb wave type of high frequency resonator was proposed. But any Lamb wave resonator operating really above 3 GHz, which is difficult to be realized with conventional surface acoustic wave (SAW), have been not reported. Authors have tried to realize the high frequency device by using A1 mode of Lamb wave propagating in the X-axis direction on Z-cut thin LiNbO3 film deposited by chemical vapor...
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