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Use of sub-design-rule (SDR) thick-gate-oxide MOS structures can significantly improve RF performance. Utilizing 3-stack 3.3-V MOSFET's with an SDR channel length, a 31.3-dBm 900-MHz Bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB is realized. A 28-dBm 2.4-GHz T/R switch with TX and RX insertion losses of 0.8 and 1.2 dB is also demonstrated. SDR MOS varactors...
A 31.3-dBm 900-MHz bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB and isolation of 29 dB is demonstrated. The switch utilizes a floating-body technique, feed-forward capacitors, and 3-stack 3.3-V MOSFETs with 0.26-mum sub-design-rule (SDR) channel length. Using these, a 28-dBm 2.4-GHz T/R switch with TX and RX insertion losses of 0.8 and 1.2 dB, and isolation...
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