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This work proposes process/resistance variation-insensitive read schemes for embedded RRAM to achieve fast read speeds with high yields. An embedded mega-bit scale (4Mb), single-level-cell (SLC) RRAM macro with sub-8ns read-write random access time is presented. Multi-level-cell (MLC) operation with 160ns write-verify operation is demonstrated.
Especially for microcontroller and mobile applications, embedded nonvolatile memory is an important technology offering to reduce power and provide local persistent storage. This article describes a new resistive RAM device with fast write operation to improve the speed of embedded nonvolatile memories.
A 1-Kb HfO2 based RRAM for high speed nonvolatile memory application is proposed. With this chip, a high speed write characteristic in the RRAM cell can be achieved. The present circuit design includes a 1T1R RRAM (1 transistor/1 resistive memory) cell and a voltage write circuit, which limit the current through the memory cell. The random write time at VDD = 3.3V is as fast as 5 ns in the RRAM, which...
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