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Interface states at metal-semiconductor or semiconductor-semiconductor interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions that are contacted by metal, can be beneficial for suppressing the injection of majority carriers from the bulk. The effect is more pronounced as the p+n junction depth becomes smaller and it dominates the electrical characteristics of ultrashallow...
Influence of different active surface orientations and fin-width scaling on electron and hole mobility in ultra-thin body FinFETs is examined. Results of mobility modeling are validated on experimental data, including (111)-oriented FinFETs from our previous work which are here proven to exhibit no mobility degradation caused by fin-width fluctuations. We show that (111)-oriented FinFETs are the optimum...
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