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In this work, magnetron sputtering was used to epitaxially grow Ge films on sapphire at low temperatures (400°C–500°C) and diode laser annealing was employed to improve the crystallinity of the Ge films. The deposition temperature might slightly influence the crystallinity of the Ge film through affecting the diffusion rate of Ge. After laser scans of milliseconds exposure time, significant defect...
A high density of intragrain defects in solid-phase crystallised Si thin films results in poor electronic properties and impedes their use for thin-film solar cell or thin-film transistor applications. This paper demonstrates that a high-power line-focus diode laser can eliminate intragrain defects (microtwins and dislocations) in polycrystalline Si films while maintaining the smooth defect-free surface...
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