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The efficiency of 16.03% on a 30cm × 30cm-sized Cu(In, Ga)(Se, S)2 (CIS)-based thin-film circuit was achieved by review of its design for absorber layer. Increase in a CIS-based absorber thickness confirms enhancement of short-circuit current density. In this study, we report that it is critical to understand the correlation between the film thickness of the absorber and sulfurization degree to improve...
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