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The efficiency of 16.03% on a 30cm × 30cm-sized Cu(In, Ga)(Se, S)2 (CIS)-based thin-film circuit was achieved by review of its design for absorber layer. Increase in a CIS-based absorber thickness confirms enhancement of short-circuit current density. In this study, we report that it is critical to understand the correlation between the film thickness of the absorber and sulfurization degree to improve...
We have fabricated two-terminal mechanical stacked chalcopyrite-based tandem devices to identify the technical issues required to achieve high performance solar cells in the near future. A tandem device with a Ag(ln0.2Ga0.8)Se2 (AIGS) top cell and a Cu(ln,Ga)Se2 (CIGS) bottom cell showed an open-circuit-voltage (Voc) of 1.46 V. It was, however, found that the short-circuit current (Jsc) of a two-terminal...
The titanium nitride (TiN) gate electrode with a tunable work function has successfully been deposited on the sidewalls of upstanding Si-fin channels of FinFETs by using a conventional reactive sputtering. It was found that the work function of the TiN (phiTiN) slightly decreases with increasing nitrogen (N2) gas flow ratio, RN=N2/(Ar+N2) in the sputtering, from 17% to 100%. The experimental threshold...
Summary form only given. Room-temperature continuous-wave operation of II-VI blue-green laser diodes has been possible with a lifetime exceeding an hour. Some major problems limiting a long life-time for II-VI blue-green lasers are a high pre-existing defect density and the growth of defect density during laser operation. Recently, we proposed a theoretical model with an analytical solution for the...
Three theoretical aspects of single-channel current analysis are presented: (1) A stochastic theory of a stationary multichannel system is developed, based on the so-called basic theorem. The dwell-time distribution of every type of period between successive open or shut transitions and other stochastic properties is obtained. Analysis and computer-simulation errors are estimated. (2) Two properties...
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