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Infrared photodetectors with InAs/GaSb type-II quantum wells on InP substrate was fabricated and evaluated. Dark current density was 0.1mA/cm2 at 112K. Quantum efficiency at 5µm was 10%. This results show that InAs/GaSb quantum wells on InP substrate has potential for infrared image sensor.
This paper presents highly precise measurements of thermal expansion of a “hybrid” carbon-fiber reinforced silicon carbide composite, HB-Cesic® – a trademark of ECM, in the temperature region of ∼310–10K. Whilst C/SiC composites have been considered to be promising for the mirrors and other structures of space-borne cryogenic telescopes, the anisotropic thermal expansion has been a potential disadvantage...
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