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In the paper, the nonlinear model of a microwave transistor is extracted from large-signal measurements acquired under “dynamic-bias” operation. Specifically, the transistor is driven by low-frequency large signals while a high-frequency tickle is applied on top of them. The low-frequency large signals, along with the dc bias voltages, set the large-signal operating point which represents a dynamic-bias...
The manuscript presents a load-pull characterization technique for the design of power amplifiers in the millimeter-wave frequency band. The proposed approach is based on a recently proposed characterization technique which, by exploiting direct low-frequency nonlinear electron device measurements in conjunction with a model-based description of the device strictly dynamic nonlinearities, achieves...
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